Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SJ360(TE12L,F)
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741
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 1A SC-62 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-243AA PW-MINI 500mW (Ta) P-Channel 60V 1A (Ta) 730 mOhm @ 500mA, 10V 2V @ 1mA 6.5nC @ 10V 155pF @ 10V 4V, 10V ±20V
BSH112,235
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RFQ
1,533
In-stock
NXP USA Inc. MOSFET N-CH 60V 300MA SOT-23 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 830mW (Tc) N-Channel 60V 300mA (Ta) 5 Ohm @ 500mA, 10V 2V @ 1mA - 40pF @ 10V 4.5V, 10V ±15V
2N7002K,215
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RFQ
3,225
In-stock
NXP USA Inc. MOSFET N-CH 60V 340MA SOT23 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 830mW (Ta) N-Channel 60V 340mA (Ta) 3.9 Ohm @ 500mA, 10V 2V @ 1mA - 40pF @ 10V 4.5V, 10V ±15V
2SK2266(TE24R,Q)
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RFQ
2,589
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 45A TO220SM - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220SM 65W (Tc) N-Channel 60V 45A (Ta) 30 mOhm @ 25A, 10V 2V @ 1mA 60nC @ 10V 1800pF @ 10V 4V, 10V ±20V