Supplier Device Package :
Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB230N06L3GATMA1
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Infineon Technologies MOSFET N-CH 60V 30A TO263-3 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 36W (Tc) N-Channel - 60V 30A (Tc) 23 mOhm @ 30A, 10V 2.2V @ 11µA 10nC @ 4.5V 1600pF @ 30V 4.5V, 10V ±20V
IPD230N06NGBTMA1
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Infineon Technologies MOSFET N-CH 60V 30A DPAK OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 100W (Tc) N-Channel - 60V 30A (Tc) 23 mOhm @ 30A, 10V 4V @ 50µA 31nC @ 10V 1100pF @ 30V 10V ±20V