- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,091
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 20A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 36W (Tc) | N-Channel | - | 60V | 20A (Tc) | 39 mOhm @ 10A, 10V | 2.5V @ 250µA | 15nC @ 10V | 675pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,498
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 27A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 36W (Tc) | N-Channel | - | 60V | 27A (Tc) | 26 mOhm @ 27A, 10V | 4V @ 11µA | 15nC @ 10V | 1200pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
3,970
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 30A TO220-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 36W (Tc) | N-Channel | - | 60V | 30A (Tc) | 23 mOhm @ 30A, 10V | 2.2V @ 11µA | 10nC @ 4.5V | 1600pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,116
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 68A (Tc) | 7.2 mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,952
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 36W (Tc) | N-Channel | - | 60V | 50A (Tc) | 11.4 mOhm @ 8A, 4.5V | 2.5V @ 300µA | 28.4nC @ 10V | 1990pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,558
In-stock
|
Infineon Technologies | MOSFET N-CH 60V TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 36W (Tc) | N-Channel | - | 60V | 69A (Tc) | 4 mOhm @ 69A, 10V | 3.3V @ 50µA | 44nC @ 10V | 3375pF @ 30V | 6V, 10V | ±20V | |||
