- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,576
In-stock
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STMicroelectronics | MOSFET N-CH 60V 80A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 60V | 80A (Tc) | 10 mOhm @ 40A, 10V | 4V @ 250µA | 140nC @ 10V | 10000pF @ 25V | 10V | ±20V | |||
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VIEW |
1,283
In-stock
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Nexperia USA Inc. | MOSFET N-CH 60V 150A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 326W (Tc) | N-Channel | - | 60V | 150A (Tc) | 2.6 mOhm @ 25A, 10V | 4V @ 1mA | 140nC @ 10V | 7629pF @ 25V | 10V | ±20V | |||
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VIEW |
2,564
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 100A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 60V | 100A (Tc) | 2.7 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 10500pF @ 30V | 10V | ±20V | |||
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VIEW |
1,498
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 100A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 255W (Tc) | N-Channel | - | 60V | 100A (Ta) | 2.3 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 10500pF @ 30V | 10V | ±20V |