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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTQ200N06P	RFQ VIEW	PDF RFQ	2,225 In-stock	IXYS	MOSFET N-CH 60V 200A TO-3P		PolarHT™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	714W (Tc)	N-Channel	-	60V	200A (Tc)	5 mOhm @ 400A, 15V	5V @ 250µA	200nC @ 10V	5400pF @ 25V	10V	±20V
	FQA85N06	RFQ VIEW	PDF RFQ	2,644 In-stock	ON Semiconductor	MOSFET N-CH 60V 100A TO-3P		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN	214W (Tc)	N-Channel	-	60V	100A (Tc)	10 mOhm @ 50A, 10V	4V @ 250µA	112nC @ 10V	4120pF @ 25V	10V	±25V
	FQA65N06	RFQ VIEW	PDF RFQ	3,429 In-stock	ON Semiconductor	MOSFET N-CH 60V 72A TO-3P		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	183W (Tc)	N-Channel	-	60V	72A (Tc)	16 mOhm @ 36A, 10V	4V @ 250µA	65nC @ 10V	2410pF @ 25V	10V	±25V
	IXTQ150N06P	RFQ VIEW	PDF RFQ	2,046 In-stock	IXYS	MOSFET N-CH 60V 150A TO-3P		PolarHT™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	480W (Tc)	N-Channel	-	60V	150A (Tc)	10 mOhm @ 75A, 10V	5V @ 250µA	118nC @ 10V	3000pF @ 25V	10V	±20V
	FQA170N06	RFQ VIEW	PDF RFQ	638 In-stock	ON Semiconductor	MOSFET N-CH 60V 170A TO-3P		QFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN	375W (Tc)	N-Channel	-	60V	170A (Tc)	5.6 mOhm @ 85A, 10V	4V @ 250µA	290nC @ 10V	9350pF @ 25V	10V	±25V

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