- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,877
In-stock
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ON Semiconductor | MOSFET N-CH 60V 200MA TO-92 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 350mW (Tc) | N-Channel | 60V | 200mA (Ta) | 1.2 Ohm @ 1A, 10V | 2.5V @ 1mA | - | 100pF @ 15V | 5V, 10V | ±20V | |||
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VIEW |
1,321
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 1.1A TO92-3 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | E-Line-3 | E-Line (TO-92 compatible) | 850mW (Ta) | N-Channel | 60V | 1.1A (Ta) | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
908
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 1.1A TO92-3 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | E-Line-3 | E-Line (TO-92 compatible) | 850mW (Ta) | N-Channel | 60V | 1.1A (Ta) | 330 mOhm @ 3A, 10V | 3V @ 1mA | - | 350pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
3,319
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 0.6A TO92-3 | - | Active | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | E-Line-3 | E-Line (TO-92 compatible) | 700mW (Ta) | N-Channel | 60V | 600mA (Ta) | 1 Ohm @ 1.5A, 10V | 3V @ 1mA | - | 100pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
3,533
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 300MA TO92 | - | Active | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 | 400mW (Ta) | N-Channel | 60V | 300mA (Ta) | 5 Ohm @ 100mA, 10V | 2.5V @ 250µA | 0.4nC @ 4.5V | 7.32pF @ 25V | 5V, 10V | ±20V |