- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,183
In-stock
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ON Semiconductor | MOSFET N-CH 60V 75A TO220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 2.4W (Ta), 214W (Tj) | N-Channel | 60V | 75A (Ta) | 9.5 mOhm @ 37.5A, 10V | 4V @ 250µA | 130nC @ 10V | 4510pF @ 25V | 10V | ±20V | |||
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VIEW |
3,351
In-stock
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ON Semiconductor | MOSFET N-CH 60V 80A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 166W (Tc) | N-Channel | 60V | 80A (Tc) | 10 mOhm @ 40A, 10V | 4V @ 250µA | 130nC @ 10V | 4500pF @ 25V | 10V | ±20V | |||
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VIEW |
881
In-stock
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ON Semiconductor | MOSFET N-CH 60V 75A TO220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 2.4W (Ta), 214W (Tj) | N-Channel | 60V | 75A (Ta) | 9.5 mOhm @ 37.5A, 10V | 4V @ 250µA | 130nC @ 10V | 4510pF @ 25V | 10V | ±20V | |||
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VIEW |
2,609
In-stock
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Infineon Technologies | MOSFET N-CH 60V 84A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 10V | ±20V | |||
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VIEW |
3,485
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A TO262 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 160W (Tc) | N-Channel | 60V | 110A (Tc) | 5.1 mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
3,156
In-stock
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Infineon Technologies | MOSFET N CH 60V 110A TO-220AB | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 160W (Tc) | N-Channel | 60V | 110A (Tc) | 5.1 mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
3,549
In-stock
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Infineon Technologies | MOSFET N-CH 60V 84A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 10V | ±20V | |||
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VIEW |
3,118
In-stock
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Infineon Technologies | MOSFET N CH 60V 90A I-PAK | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 140W (Tc) | N-Channel | 60V | 90A (Tc) | 4.8 mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4360pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
1,442
In-stock
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Nexperia USA Inc. | MOSFET N-CH 60V 100A I2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 306W (Tc) | N-Channel | 60V | 100A (Tc) | 3 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | 8079pF @ 30V | 10V | ±20V | |||
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VIEW |
1,733
In-stock
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Nexperia USA Inc. | MOSFET N-CH 60V 100A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 306W (Tc) | N-Channel | 60V | 100A (Tc) | 3 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | 8079pF @ 30V | 10V | ±20V |