Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTP75N06G
RFQ
VIEW
RFQ
2,183
In-stock
ON Semiconductor MOSFET N-CH 60V 75A TO220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 2.4W (Ta), 214W (Tj) N-Channel 60V 75A (Ta) 9.5 mOhm @ 37.5A, 10V 4V @ 250µA 130nC @ 10V 4510pF @ 25V 10V ±20V
NTP5411NG
RFQ
VIEW
RFQ
3,351
In-stock
ON Semiconductor MOSFET N-CH 60V 80A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 166W (Tc) N-Channel 60V 80A (Tc) 10 mOhm @ 40A, 10V 4V @ 250µA 130nC @ 10V 4500pF @ 25V 10V ±20V
NTP75N06
RFQ
VIEW
RFQ
881
In-stock
ON Semiconductor MOSFET N-CH 60V 75A TO220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 2.4W (Ta), 214W (Tj) N-Channel 60V 75A (Ta) 9.5 mOhm @ 37.5A, 10V 4V @ 250µA 130nC @ 10V 4510pF @ 25V 10V ±20V
IRF1010EL
RFQ
VIEW
RFQ
2,609
In-stock
Infineon Technologies MOSFET N-CH 60V 84A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 200W (Tc) N-Channel 60V 84A (Tc) 12 mOhm @ 50A, 10V 4V @ 250µA 130nC @ 10V 3210pF @ 25V 10V ±20V
IRFSL7540PBF
RFQ
VIEW
RFQ
3,485
In-stock
Infineon Technologies MOSFET N-CH 60V 120A TO262 HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 160W (Tc) N-Channel 60V 110A (Tc) 5.1 mOhm @ 65A, 10V 3.7V @ 100µA 130nC @ 10V 4555pF @ 25V 6V, 10V ±20V
IRFB7540PBF
RFQ
VIEW
RFQ
3,156
In-stock
Infineon Technologies MOSFET N CH 60V 110A TO-220AB HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 160W (Tc) N-Channel 60V 110A (Tc) 5.1 mOhm @ 65A, 10V 3.7V @ 100µA 130nC @ 10V 4555pF @ 25V 6V, 10V ±20V
IRF1010EPBF
RFQ
VIEW
RFQ
3,549
In-stock
Infineon Technologies MOSFET N-CH 60V 84A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel 60V 84A (Tc) 12 mOhm @ 50A, 10V 4V @ 250µA 130nC @ 10V 3210pF @ 25V 10V ±20V
IRFU7540PBF
RFQ
VIEW
RFQ
3,118
In-stock
Infineon Technologies MOSFET N CH 60V 90A I-PAK HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 140W (Tc) N-Channel 60V 90A (Tc) 4.8 mOhm @ 66A, 10V 3.7V @ 100µA 130nC @ 10V 4360pF @ 25V 6V, 10V ±20V
PSMN3R0-60ES,127
RFQ
VIEW
RFQ
1,442
In-stock
Nexperia USA Inc. MOSFET N-CH 60V 100A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 306W (Tc) N-Channel 60V 100A (Tc) 3 mOhm @ 25A, 10V 4V @ 1mA 130nC @ 10V 8079pF @ 30V 10V ±20V
PSMN3R0-60PS,127
RFQ
VIEW
RFQ
1,733
In-stock
Nexperia USA Inc. MOSFET N-CH 60V 100A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 306W (Tc) N-Channel 60V 100A (Tc) 3 mOhm @ 25A, 10V 4V @ 1mA 130nC @ 10V 8079pF @ 30V 10V ±20V