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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,615
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6A | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1.2W (Ta) | N-Channel | - | 60V | 6A (Ta) | 36 mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | 4V, 10V | ±20V | |||
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VIEW |
2,515
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6A | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1.2W (Ta) | N-Channel | - | 60V | 6A (Ta) | 36 mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | 4V, 10V | ±20V | |||
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VIEW |
1,653
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6A | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1.2W (Ta) | N-Channel | - | 60V | 6A (Ta) | 36 mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | 4V, 10V | ±20V | |||
