- Manufacture :
- Series :
- Part Status :
- Packaging :
- Operating Temperature :
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- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,565
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
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VIEW |
3,229
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | 4V, 5V | ±10V | |||
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VIEW |
2,466
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 2.5A TSM | U-MOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 60V | 2.5A (Ta) | 107 mOhm @ 2A, 10V | - | 7nC @ 10V | 235pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
3,347
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 2.5A TSM | U-MOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 60V | 2.5A (Ta) | 107 mOhm @ 2A, 10V | - | 7nC @ 10V | 235pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,880
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,916
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 2.5A TSM | U-MOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | 60V | 2.5A (Ta) | 107 mOhm @ 2A, 10V | 2.8V @ 1mA | 7nC @ 10V | 235pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,157
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 2.5A TSM | U-MOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | 60V | 2.5A (Ta) | 107 mOhm @ 2A, 10V | 2.8V @ 1mA | 7nC @ 10V | 235pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,090
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 2.5A TSM | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | 60V | 2.5A (Ta) | 107 mOhm @ 2A, 10V | 2.8V @ 1mA | 7nC @ 10V | 235pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
750
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | 4V, 5V | ±10V |