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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK4R3E06PL,S1X	RFQ VIEW	PDF RFQ	1,556 In-stock	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR		U-MOSIX-H	Active	Tube	MOSFET (Metal Oxide)	175°C (TJ)	Through Hole	TO-220-3	TO-220	87W (Tc)	N-Channel	-	60V	80A (Tc)	7.2 mOhm @ 15A, 4.5V	2.5V @ 500µA	48.2nC @ 10V	3280pF @ 30V	4.5V, 10V	±20V
	TK4R4P06PL,RQ	RFQ VIEW	PDF RFQ	2,549 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CHANNEL 60V 58A DPAK		U-MOSIX-H	Active	Digi-Reel®	MOSFET (Metal Oxide)	175°C	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	87W (Tc)	N-Channel	-	60V	58A (Tc)	4.4 mOhm @ 29A, 10V	2.5V @ 500µA	48.2nC @ 10V	3280pF @ 30V	4.5V, 10V	±20V
	TK4R4P06PL,RQ	RFQ VIEW	PDF RFQ	3,326 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CHANNEL 60V 58A DPAK		U-MOSIX-H	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	175°C	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	87W (Tc)	N-Channel	-	60V	58A (Tc)	4.4 mOhm @ 29A, 10V	2.5V @ 500µA	48.2nC @ 10V	3280pF @ 30V	4.5V, 10V	±20V
	TK4R4P06PL,RQ	RFQ VIEW	PDF RFQ	1,936 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CHANNEL 60V 58A DPAK		U-MOSIX-H	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	175°C	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	87W (Tc)	N-Channel	-	60V	58A (Tc)	4.4 mOhm @ 29A, 10V	2.5V @ 500µA	48.2nC @ 10V	3280pF @ 30V	4.5V, 10V	±20V

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