Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJK0601DPN-E0#T2
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1,690
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Renesas Electronics America MOSFET N-CH 60V 110A TO220 - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 60V 110A (Ta) 3.1 mOhm @ 55A, 10V - 141nC @ 10V 10000pF @ 10V 10V ±20V
IRF1010EL
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2,609
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Infineon Technologies MOSFET N-CH 60V 84A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 200W (Tc) N-Channel - 60V 84A (Tc) 12 mOhm @ 50A, 10V 4V @ 250µA 130nC @ 10V 3210pF @ 25V 10V ±20V
IRF1010EPBF
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3,549
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Infineon Technologies MOSFET N-CH 60V 84A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 60V 84A (Tc) 12 mOhm @ 50A, 10V 4V @ 250µA 130nC @ 10V 3210pF @ 25V 10V ±20V
CSD18542KCS
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1,859
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Texas Instruments MOSFET N-CH 60V 200A TO220-3 NexFET™ Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 200W (Tc) N-Channel - 60V 200A (Ta) 44 mOhm @ 100A, 10V 2.2V @ 250µA 57nC @ 10V 5070pF @ 30V 4.5V, 10V ±20V