Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRL60HS118
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3,549
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Infineon Technologies MOSFET N-CH 60V 18.5A 6PQFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-PQFN (2x2) 11.5W (Tc) N-Channel 60V 18.5A (Tc) 17 mOhm @ 11A, 10V 2.3V @ 10µA 8nC @ 4.5V 660pF @ 25V 4.5V, 10V ±20V
IRL60HS118
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RFQ
3,652
In-stock
Infineon Technologies MOSFET N-CH 60V 18.5A 6PQFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-PQFN (2x2) 11.5W (Tc) N-Channel 60V 18.5A (Tc) 17 mOhm @ 11A, 10V 2.3V @ 10µA 8nC @ 4.5V 660pF @ 25V 4.5V, 10V ±20V
IRL60HS118
RFQ
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RFQ
2,437
In-stock
Infineon Technologies MOSFET N-CH 60V 18.5A 6PQFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-PQFN (2x2) 11.5W (Tc) N-Channel 60V 18.5A (Tc) 17 mOhm @ 11A, 10V 2.3V @ 10µA 8nC @ 4.5V 660pF @ 25V 4.5V, 10V ±20V