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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,341
In-stock
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Infineon Technologies | MOSFET N-CH 60V 240A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) | 380W (Tc) | N-Channel | - | 60V | 240A (Tc) | 1.9 mOhm @ 180A, 10V | 2.5V @ 250µA | 160nC @ 4.5V | 11270pF @ 50V | 4.5V, 10V | ±16V | |||
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VIEW |
2,247
In-stock
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Infineon Technologies | MOSFET N-CH 60V 80A TO220-3 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 79W (Tc) | N-Channel | - | 60V | 80A (Tc) | 6.7 mOhm @ 80A, 10V | 2.2V @ 40µA | 75nC @ 10V | 5680pF @ 25V | 4.5V, 10V | ±16V | |||
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3,167
In-stock
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Infineon Technologies | MOSFET N-CH 60V 50A TO-252 | OptiMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 136W (Tc) | N-Channel | - | 60V | 50A (Tc) | 12.7 mOhm @ 50A, 10V | 2V @ 80µA | 69nC @ 10V | 2300pF @ 30V | 4.5V, 10V | ±20V | |||
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2,191
In-stock
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Infineon Technologies | MOSFET N-CH 60V 200MA SOT23 | SIPMOS® | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 360mW (Ta) | N-Channel | - | 60V | 200mA (Ta) | 5 Ohm @ 500mA, 10V | 2.3V @ 26µA | 1.5nC @ 10V | 56pF @ 25V | 4.5V, 10V | ±20V | |||
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3,104
In-stock
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Infineon Technologies | MOSFET N-CH 60V 200MA SOT23 | SIPMOS® | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 360mW (Ta) | N-Channel | - | 60V | 200mA (Ta) | 5 Ohm @ 500mA, 10V | 2.3V @ 26µA | 1.5nC @ 10V | 56pF @ 25V | 4.5V, 10V | ±20V | |||
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3,334
In-stock
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Infineon Technologies | MOSFET N-CH 60V 7A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 60V | 7A (Ta) | 26 mOhm @ 4.2A, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,257
In-stock
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Infineon Technologies | MOSFET N-CH 60V 50A D-PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 60V | 50A (Tc) | 6.8 mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | 3779pF @ 50V | 4.5V, 10V | ±16V | |||
