Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDP80N06
RFQ
VIEW
RFQ
3,703
In-stock
ON Semiconductor MOSFET N-CH 60V 80A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 176W (Tc) N-Channel - 60V 80A (Tc) 10 mOhm @ 40A, 10V 4V @ 250µA 74nC @ 10V 3190pF @ 25V 10V ±20V
FDP65N06
RFQ
VIEW
RFQ
785
In-stock
ON Semiconductor MOSFET N-CH 60V 65A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 135W (Tc) N-Channel - 60V 65A (Tc) 16 mOhm @ 32.5A, 10V 4V @ 250µA 43nC @ 10V 2170pF @ 25V 10V ±20V
FDP55N06
RFQ
VIEW
RFQ
2,050
In-stock
ON Semiconductor MOSFET N-CH 60V 55A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 114W (Tc) N-Channel - 60V 55A (Tc) 22 mOhm @ 27.5A, 10V 4V @ 250µA 37nC @ 10V 1510pF @ 25V 10V ±25V
FDPF55N06
RFQ
VIEW
RFQ
3,234
In-stock
ON Semiconductor MOSFET N-CH 60V 55A TO-220F UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 48W (Tc) N-Channel - 60V 55A (Tc) 22 mOhm @ 27.5A, 10V 4V @ 250µA 37nC @ 10V 1510pF @ 25V 10V ±25V