Vgs(th) (Max) @ Id :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUK9E4R9-60E,127
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NXP USA Inc. MOSFET N-CH 60V 100A I2PAK TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 234W (Tc) N-Channel - 60V 100A (Tc) 4.5 mOhm @ 25A, 10V 2.1V @ 1mA 65nC @ 5V 9710pF @ 25V 5V, 10V ±10V
BUK9E3R7-60E,127
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3,587
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NXP USA Inc. MOSFET N-CH 60V 120A I2PAK TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 293W (Tc) N-Channel - 60V 120A (Tc) 3.4 mOhm @ 25A, 10V 2.1V @ 1mA 95nC @ 5V 13490pF @ 25V 5V, 10V ±10V
BUK9E2R8-60E,127
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1,503
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NXP USA Inc. MOSFET N-CH 60V 120A I2PAK TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 349W (Tc) N-Channel - 60V 120A (Tc) 2.6 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 17450pF @ 25V 5V, 10V ±10V
BUK9E15-60E,127
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2,692
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NXP USA Inc. MOSFET N-CH 60V 54A I2PAK TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 96W (Tc) N-Channel - 60V 54A (Tc) 13 mOhm @ 15A, 10V 2.1V @ 1mA 20.5nC @ 5V 2651pF @ 25V 5V, 10V ±10V
BUK952R8-60E,127
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1,292
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NXP USA Inc. MOSFET N-CH 60V 120A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 349W (Tc) N-Channel - 60V 120A (Tc) 2.6 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 17450pF @ 25V 5V, 10V ±10V
BUK9515-60E,127
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2,252
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NXP USA Inc. MOSFET N-CH 60V 54A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 96W (Tc) N-Channel - 60V 54A (Tc) 13 mOhm @ 15A, 10V 2.1V @ 1mA 20.5nC @ 5V 2651pF @ 25V 5V, 10V ±10V
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3,336
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Nexperia USA Inc. MOSFET N-CH 60V 270MA TO236AB TrenchMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB 310mW (Ta) N-Channel - 60V 270mA (Ta) 2.8 Ohm @ 200mA, 10V 2.1V @ 250µA 1nC @ 10V 23.6pF @ 10V 5V, 10V ±20V
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1,831
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Nexperia USA Inc. MOSFET N-CH 60V 190MA TO236AB TrenchMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB 265mW (Ta) N-Channel - 60V 190mA (Ta) 4.5 Ohm @ 100mA, 10V 2.1V @ 250µA 0.43nC @ 4.5V 20pF @ 10V 5V, 10V ±20V
NX7002BKMBYL
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954
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Nexperia USA Inc. MOSFET N-CH 60V SGL 3-DFN1006B TrenchMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN 3-DFN1006B (0.6x1) 350mW (Ta), 3.1W (Tc) N-Channel - 60V 350mA (Ta) 2.8 Ohm @ 200mA, 10V 2.1V @ 250µA 1nC @ 10V 23.6pF @ 10V 5V, 10V ±20V
NX7002BKMBYL
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1,665
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Nexperia USA Inc. MOSFET N-CH 60V SGL 3-DFN1006B TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN 3-DFN1006B (0.6x1) 350mW (Ta), 3.1W (Tc) N-Channel - 60V 350mA (Ta) 2.8 Ohm @ 200mA, 10V 2.1V @ 250µA 1nC @ 10V 23.6pF @ 10V 5V, 10V ±20V
NX7002BKMBYL
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1,224
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Nexperia USA Inc. MOSFET N-CH 60V SGL 3-DFN1006B TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN 3-DFN1006B (0.6x1) 350mW (Ta), 3.1W (Tc) N-Channel - 60V 350mA (Ta) 2.8 Ohm @ 200mA, 10V 2.1V @ 250µA 1nC @ 10V 23.6pF @ 10V 5V, 10V ±20V
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2,632
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Nexperia USA Inc. MOSFET N-CH 60V 100A LFPAK56 TrenchMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 238W (Ta) N-Channel - 60V 100A (Ta) 4.1 mOhm @ 25A, 10V 2.1V @ 1mA 103nC @ 10V 7853pF @ 25V 5V, 10V ±20V
NX7002BKMYL
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3,318
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Nexperia USA Inc. MOSFET N-CH 60V SGL XQFN3 TrenchMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-101, SOT-883 DFN1006-3 350mW (Ta), 3.1W (Tc) N-Channel - 60V 350mA (Ta) 2.8 Ohm @ 200mA, 10V 2.1V @ 250µA 1nC @ 10V 23.6pF @ 10V 5V, 10V ±20V
NX7002BKMYL
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3,333
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Nexperia USA Inc. MOSFET N-CH 60V SGL XQFN3 TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-101, SOT-883 DFN1006-3 350mW (Ta), 3.1W (Tc) N-Channel - 60V 350mA (Ta) 2.8 Ohm @ 200mA, 10V 2.1V @ 250µA 1nC @ 10V 23.6pF @ 10V 5V, 10V ±20V
NX7002BKMYL
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3,801
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Nexperia USA Inc. MOSFET N-CH 60V SGL XQFN3 TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-101, SOT-883 DFN1006-3 350mW (Ta), 3.1W (Tc) N-Channel - 60V 350mA (Ta) 2.8 Ohm @ 200mA, 10V 2.1V @ 250µA 1nC @ 10V 23.6pF @ 10V 5V, 10V ±20V