- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,616
In-stock
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Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 79W (Tc) | N-Channel | - | 60V | 80A (Tc) | 7.4 mOhm @ 80A, 10V | 4V @ 40µA | 56nC @ 10V | 4500pF @ 25V | 10V | ±20V | |||
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VIEW |
3,659
In-stock
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Infineon Technologies | MOSFET N-CH 60V 24A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 3W (Ta), 136W (Tc) | N-Channel | - | 60V | 24A (Ta), 100A (Tc) | 2.9 mOhm @ 100A, 10V | 2.8V @ 75µA | 56nC @ 10V | 4100pF @ 30V | 6V, 10V | ±20V |