Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TSM480P06CH X0G
RFQ
VIEW
RFQ
1,052
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 60V 20A TO251 - Active Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251 (IPAK) 66W (Tc) P-Channel 60V 20A (Tc) 48 mOhm @ 8A, 10V 2.2V @ 250µA 22.4nC @ 10V 1250pF @ 30V 4.5V, 10V ±20V
TSM340N06CH X0G
RFQ
VIEW
RFQ
2,445
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 30A TO251 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251 (IPAK) 66W (Tc) N-Channel 60V 30A (Tc) 34 mOhm @ 15A, 10V 2.5V @ 250µA 16.6nC @ 10V 1180pF @ 30V 4.5V, 10V ±20V