Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFP450
RFQ
VIEW
RFQ
1,248
In-stock
STMicroelectronics MOSFET N-CH 500V 14A TO-247 PowerMESH™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 190W (Tc) N-Channel - 500V 14A (Tc) 380 mOhm @ 7A, 10V 4V @ 250µA 90nC @ 10V 2000pF @ 25V 10V ±30V
APT24F50B
RFQ
VIEW
RFQ
879
In-stock
Microsemi Corporation MOSFET N-CH 500V 24A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 335W (Tc) N-Channel - 500V 24A (Tc) 240 mOhm @ 11A, 10V 5V @ 1mA 90nC @ 10V 3630pF @ 25V 10V ±30V