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- Package / Case :
- Supplier Device Package :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,657
In-stock
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Renesas Electronics America | MOSFET N-CH 500V 12A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FL | 30W (Tc) | N-Channel | - | 500V | 12A (Ta) | 700 mOhm @ 6A, 10V | - | 27.8nC @ 10V | 1050pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,170
In-stock
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Renesas Electronics America | MOSFET N-CH 500V 12A LDPAK | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-83 | 4-LDPAK | 100W (Tc) | N-Channel | - | 500V | 12A (Ta) | 700 mOhm @ 6A, 10V | - | 27.8nC @ 10V | 1050pF @ 25V | 10V | ±30V | |||
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VIEW |
3,309
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 10A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 500V | 10A (Ta) | 720 mOhm @ 5A, 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | 10V | ±30V | |||
