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- Power Dissipation (Max) :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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,%20SC-63.JPG)
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VIEW |
3,784
In-stock
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ON Semiconductor | MOSFET N-CH 500V 4.5A DPAK | QFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 61W (Tc) | N-Channel | - | 500V | 4.5A (Tc) | 1.2 Ohm @ 2.25A, 10V | 4V @ 250µA | 25nC @ 10V | 700pF @ 25V | 10V | ±30V | |||
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VIEW |
2,183
In-stock
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ON Semiconductor | MOSFET N-CH 500V 4.5A DPAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 61W (Tc) | N-Channel | - | 500V | 4.5A (Tc) | 1.2 Ohm @ 2.25A, 10V | 4V @ 250µA | 25nC @ 10V | 700pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,310
In-stock
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ON Semiconductor | MOSFET N-CH 500V 4.5A DPAK | QFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 61W (Tc) | N-Channel | - | 500V | 4.5A (Tc) | 1.2 Ohm @ 2.25A, 10V | 4V @ 250µA | 25nC @ 10V | 700pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,607
In-stock
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ON Semiconductor | MOSFET N-CH 500V 4.5A TO-220F | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 28W (Tc) | N-Channel | - | 500V | 4.5A (Tc) | 1.55 Ohm @ 2.25A, 10V | 5V @ 250µA | 8nC @ 10V | 700pF @ 25V | 10V | ±30V | |||
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VIEW |
3,200
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 7.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 7.5A (Ta) | 1.04 Ohm @ 3.8A, 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | 10V | ±30V | |||
