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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	APL502B2G	RFQ VIEW	PDF RFQ	3,363 In-stock	Microsemi Corporation	MOSFET N-CH 500V 58A T-MAX		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	730W (Tc)	N-Channel	500V	58A (Tc)	90 mOhm @ 29A, 12V	4V @ 2.5mA	-	9000pF @ 25V	15V	±30V
	APT5010JVRU3	RFQ VIEW	PDF RFQ	3,666 In-stock	Microsemi Corporation	MOSFET N-CH 500V 44A SOT227		-	Active	Bulk	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227	450W (Tc)	N-Channel	500V	44A (Tc)	100 mOhm @ 22A, 10V	4V @ 2.5mA	312nC @ 10V	7410pF @ 25V	10V	±30V
	APT5010JVRU2	RFQ VIEW	PDF RFQ	1,410 In-stock	Microsemi Corporation	MOSFET N-CH 500V 44A SOT227		-	Active	Bulk	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227	450W (Tc)	N-Channel	500V	44A (Tc)	100 mOhm @ 22A, 10V	4V @ 2.5mA	312nC @ 10V	7410pF @ 25V	10V	±30V
	APL502LG	RFQ VIEW	PDF RFQ	2,199 In-stock	Microsemi Corporation	MOSFET N-CH 500V 58A TO-264		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 [L]	730W (Tc)	N-Channel	500V	58A (Tc)	90 mOhm @ 29A, 12V	4V @ 2.5mA	-	9000pF @ 25V	15V	±30V
	APL502J	RFQ VIEW	PDF RFQ	1,656 In-stock	Microsemi Corporation	MOSFET N-CH 500V 52A SOT-227		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	ISOTOP®	568W (Tc)	N-Channel	500V	52A (Tc)	90 mOhm @ 26A, 12V	4V @ 2.5mA	-	9000pF @ 25V	15V	±30V

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