Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJL5012DPE-00#J3
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Renesas Electronics America MOSFET N-CH 500V 12A LDPAK - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-83 4-LDPAK 100W (Tc) N-Channel - 500V 12A (Ta) 700 mOhm @ 6A, 10V - 27.8nC @ 10V 1050pF @ 25V 10V ±30V
FDB12N50FTM-WS
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1,614
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ON Semiconductor MOSFET N-CH 500V 11.5A D2PAK UniFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK 165W (Tc) N-Channel - 500V 11.5A (Tc) 700 mOhm @ 6A, 10V 5V @ 250µA 30nC @ 10V 1395pF @ 25V 10V ±30V
FDB12N50FTM-WS
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1,529
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ON Semiconductor MOSFET N-CH 500V 11.5A D2PAK UniFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK 165W (Tc) N-Channel - 500V 11.5A (Tc) 700 mOhm @ 6A, 10V 5V @ 250µA 30nC @ 10V 1395pF @ 25V 10V ±30V
FDB12N50FTM-WS
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3,812
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ON Semiconductor MOSFET N-CH 500V 11.5A D2PAK UniFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK 165W (Tc) N-Channel - 500V 11.5A (Tc) 700 mOhm @ 6A, 10V 5V @ 250µA 30nC @ 10V 1395pF @ 25V 10V ±30V