Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK3199
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1,639
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Sanken MOSFET N-CH 500V TO-220F - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 30W (Tc) N-Channel - 500V 5A (Ta) 1.5 Ohm @ 2.5A, 10V 4V @ 1mA - 650pF @ 10V 10V ±30V
TK5P50D(T6RSS-Q)
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2,191
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Toshiba Semiconductor and Storage MOSFET N-CH 500V 5A DPAK-3 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 80W (Tc) N-Channel - 500V 5A (Ta) 1.5 Ohm @ 2.5A, 10V 4.4V @ 1mA 11nC @ 10V 490pF @ 25V 10V ±30V
RJK5030DPD-00#J2
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3,560
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Renesas Electronics America MOSFET N-CH 500V 5A MP3A - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 MP-3A 41.7W (Tc) N-Channel - 500V 5A (Ta) 1.6 Ohm @ 2A, 10V - - 550pF @ 25V 10V ±30V
RJK5030DPP-M0#T2
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RFQ
2,143
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Renesas Electronics America MOSFET N-CH 500V 5A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FL 28.5W (Tc) N-Channel - 500V 5A (Ta) 1.6 Ohm @ 2A, 10V - 13nC @ 10V 550pF @ 25V 10V ±30V
TK5A50D(STA4,Q,M)
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RFQ
2,292
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Toshiba Semiconductor and Storage MOSFET N-CH 500V 5A TO220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 500V 5A (Ta) 1.5 Ohm @ 2.5A, 10V 4.4V @ 1mA 11nC @ 10V 490pF @ 25V 10V ±30V