Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHU5N50D-E3
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Vishay Siliconix MOSFET N-CH 500V 5.3A TO251 IPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 104W (Tc) N-Channel 500V 5.3A (Tc) 1.5 Ohm @ 2.5A, 10V 5V @ 250µA 20nC @ 10V 325pF @ 100V 10V ±30V
SIHU3N50D-E3
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3,224
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Vishay Siliconix MOSFET N-CH 500V 3A TO251 IPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 69W (Tc) N-Channel 500V 3A (Tc) 3.2 Ohm @ 2.5A, 10V 5V @ 250µA 12nC @ 10V 175pF @ 100V 10V ±30V
IRFU430APBF
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2,467
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Vishay Siliconix MOSFET N-CH 500V 5A I-PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 110W (Tc) N-Channel 500V 5A (Tc) 1.7 Ohm @ 3A, 10V 4.5V @ 250µA 24nC @ 10V 490pF @ 25V 10V ±30V
IRFU420APBF
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3,346
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Vishay Siliconix MOSFET N-CH 500V 3.3A I-PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 83W (Tc) N-Channel 500V 3.3A (Tc) 3 Ohm @ 1.5A, 10V 4.5V @ 250µA 17nC @ 10V 340pF @ 25V 10V ±30V
IRFU420PBF
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2,242
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Vishay Siliconix MOSFET N-CH 500V 2.4A I-PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 2.5W (Ta), 42W (Tc) N-Channel 500V 2.4A (Tc) 3 Ohm @ 1.4A, 10V 4V @ 250µA 19nC @ 10V 360pF @ 25V 10V ±20V