- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,386
In-stock
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Microsemi Corporation | MOSFET N-CH 500V 84A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1135W (Tc) | N-Channel | - | 500V | 84A (Tc) | 65 mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | 13500pF @ 25V | 10V | ±30V | |||
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VIEW |
2,810
In-stock
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Microsemi Corporation | MOSFET N-CH 500V 56A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 780W (Tc) | N-Channel | - | 500V | 56A (Tc) | 100 mOhm @ 28A, 10V | 5V @ 2.5mA | 220nC @ 10V | 8800pF @ 25V | 10V | ±30V | |||
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VIEW |
3,849
In-stock
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Microsemi Corporation | MOSFET N-CH 500V 75A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1040W (Tc) | N-Channel | - | 500V | 75A (Tc) | 75 mOhm @ 37A, 10V | 5V @ 2.5mA | 290nC @ 10V | 11600pF @ 25V | 10V | ±30V | |||
