Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF540,127
RFQ
VIEW
RFQ
1,190
In-stock
NXP USA Inc. MOSFET N-CH 100V 23A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 100V 23A (Tc) 77 mOhm @ 17A, 10V 4V @ 1mA 65nC @ 10V 1187pF @ 25V 10V ±20V
IPP16CN10LGXKSA1
RFQ
VIEW
RFQ
812
In-stock
Infineon Technologies MOSFET N-CH 100V 54A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 100W (Tc) N-Channel - 100V 54A (Tc) 15.7 mOhm @ 54A, 10V 2.4V @ 61µA 44nC @ 10V 4190pF @ 50V 10V ±20V
IPI16CN10N G
RFQ
VIEW
RFQ
3,084
In-stock
Infineon Technologies MOSFET N-CH 100V 53A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 100W (Tc) N-Channel - 100V 53A (Tc) 16.2 mOhm @ 53A, 10V 4V @ 61µA 48nC @ 10V 3220pF @ 50V 10V ±20V
RFP22N10
RFQ
VIEW
RFQ
619
In-stock
ON Semiconductor MOSFET N-CH 100V 22A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 100V 22A (Tc) 80 mOhm @ 22A, 10V 4V @ 250µA 150nC @ 20V - 10V ±20V
IPP16CN10NGHKSA1
RFQ
VIEW
RFQ
1,803
In-stock
Infineon Technologies MOSFET N-CH 100V TO-220 OptiMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 100W (Tc) N-Channel - 100V 53A (Tc) 16.5 mOhm @ 53A, 10V 4V @ 61µA 48nC @ 10V 3220pF @ 50V 10V ±20V
IPI50N10S3L16AKSA1
RFQ
VIEW
RFQ
3,127
In-stock
Infineon Technologies MOSFET N-CH 100V 50A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 100W (Tc) N-Channel - 100V 50A (Tc) 15.7 mOhm @ 50A, 10V 2.4V @ 60µA 64nC @ 10V 4180pF @ 25V 4.5V, 10V ±20V
NTD6414AN-1G
RFQ
VIEW
RFQ
1,187
In-stock
ON Semiconductor MOSFET N-CH 100V 32A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 100W (Tc) N-Channel - 100V 32A (Tc) 37 mOhm @ 32A, 10V 4V @ 250µA 40nC @ 10V 1450pF @ 25V 10V ±20V
FQP17P10
RFQ
VIEW
RFQ
1,062
In-stock
ON Semiconductor MOSFET P-CH 100V 16.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 100W (Tc) P-Channel - 100V 16.5A (Tc) 190 mOhm @ 8.25A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±30V
IPP16CN10NGXKSA1
RFQ
VIEW
RFQ
1,695
In-stock
Infineon Technologies MOSFET N-CH 100V 53A TO-220 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 100W (Tc) N-Channel - 100V 53A (Tc) 16.5 mOhm @ 53A, 10V 4V @ 61µA 48nC @ 10V 3220pF @ 50V 10V ±20V
IPP083N10N5AKSA1
RFQ
VIEW
RFQ
3,982
In-stock
Infineon Technologies MOSFET N-CH TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 100W (Tc) N-Channel - 100V 73A (Tc) 8.3 mOhm @ 73A, 10V 3.8V @ 49µA 37nC @ 10V 2730pF @ 50V 6V, 10V ±20V
IPP50N10S3L16AKSA1
RFQ
VIEW
RFQ
3,639
In-stock
Infineon Technologies MOSFET N-CH 100V 50A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 100W (Tc) N-Channel - 100V 50A (Tc) 15.7 mOhm @ 50A, 10V 2.4V @ 60µA 64nC @ 10V 4180pF @ 25V 4.5V, 10V ±20V