- Manufacture :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
644
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.8A TO262-3 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
2,449
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | - | P-Channel | - | 100V | 6.6A (Ta) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
2,305
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.8A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,479
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.8A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
2,243
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.6A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 40W (Tc) | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,976
In-stock
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ON Semiconductor | MOSFET N-CH 100V 8.4A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | - | N-Channel | - | 100V | 8.4A (Tc) | 270 mOhm @ 5.9A, 10V | 4V @ 250µA | 15nC @ 10V | 350pF @ 25V | - | - | |||
,%20SC-63.JPG)
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VIEW |
1,944
In-stock
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ON Semiconductor | MOSFET N-CH 100V 8.4A TO-252AA | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 50W (Tc) | N-Channel | - | 100V | 8.4A (Tc) | 270 mOhm @ 5.9A, 10V | 4V @ 250µA | 15nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,492
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.6A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 40W (Tc) | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,309
In-stock
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Infineon Technologies | MOSFET P-CH 100V 6.8A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
