Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRL2910L
RFQ
VIEW
RFQ
3,789
In-stock
Infineon Technologies MOSFET N-CH 100V 55A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 200W (Tc) N-Channel 100V 55A (Tc) 26 mOhm @ 29A, 10V 2V @ 250µA 140nC @ 5V 3700pF @ 25V 4V, 10V ±16V
IRLI2910
RFQ
VIEW
RFQ
3,673
In-stock
Infineon Technologies MOSFET N-CH 100V 31A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 63W (Tc) N-Channel 100V 31A (Tc) 26 mOhm @ 16A, 10V 2V @ 250µA 140nC @ 5V 3700pF @ 25V 4V, 10V ±16V
NTP6411ANG
RFQ
VIEW
RFQ
3,864
In-stock
ON Semiconductor MOSFET N-CH 100V 72A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 217W (Tc) N-Channel 100V 77A (Tc) 14 mOhm @ 72A, 10V 4V @ 250µA 100nC @ 10V 3700pF @ 25V 10V ±20V
NTB6411ANG
RFQ
VIEW
RFQ
3,627
In-stock
ON Semiconductor MOSFET N-CH 100V 72A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 217W (Tc) N-Channel 100V 77A (Tc) 14 mOhm @ 72A, 10V 4V @ 250µA 100nC @ 10V 3700pF @ 25V 10V ±20V