Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRL510S
RFQ
VIEW
RFQ
964
In-stock
Vishay Siliconix MOSFET N-CH 100V 5.6A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 43W (Tc) N-Channel 100V 5.6A (Tc) 540 mOhm @ 3.4A, 5V 2V @ 250µA 6.1nC @ 5V 250pF @ 25V 4V, 5V ±10V
IRLL110
RFQ
VIEW
RFQ
1,374
In-stock
Vishay Siliconix MOSFET N-CH 100V 1.5A SOT223 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta), 3.1W (Tc) N-Channel 100V 1.5A (Tc) 540 mOhm @ 900mA, 5V 2V @ 250µA 6.1nC @ 5V 250pF @ 25V 4V, 5V ±10V
IRL510L
RFQ
VIEW
RFQ
3,563
In-stock
Vishay Siliconix MOSFET N-CH 100V 5.6A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 - N-Channel 100V 5.6A (Tc) 540 mOhm @ 3.4A, 5V 2V @ 250µA 6.1nC @ 5V 250pF @ 25V 4V, 5V ±10V
IRLD110
RFQ
VIEW
RFQ
2,696
In-stock
Vishay Siliconix MOSFET N-CH 100V 1A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 100V 1A (Ta) 540 mOhm @ 600mA, 5V 2V @ 250µA 6.1nC @ 5V 250pF @ 25V 4V, 5V ±10V
IRL510
RFQ
VIEW
RFQ
2,347
In-stock
Vishay Siliconix MOSFET N-CH 100V 5.6A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 43W (Tc) N-Channel 100V 5.6A (Tc) 540 mOhm @ 3.4A, 5V 2V @ 250µA 6.1nC @ 5V 250pF @ 25V 4V, 5V ±10V