- Series :
- Operating Temperature :
- Package / Case :
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- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
643
In-stock
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Infineon Technologies | MOSFET P-CH 100V 15A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 128W (Tc) | P-Channel | 100V | 15A (Tc) | 240 mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | 1280pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,084
In-stock
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Infineon Technologies | MOSFET N-CH 100V 53A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | 100V | 53A (Tc) | 16.2 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | |||
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VIEW |
2,951
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 100V 12A TO220NIS | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 35W (Tc) | P-Channel | 100V | 12A (Ta) | 210 mOhm @ 6A, 10V | 2V @ 1mA | 48nC @ 10V | 1100pF @ 10V | 4V, 10V | ±20V | |||
