Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF530N,127
RFQ
VIEW
RFQ
2,952
In-stock
NXP USA Inc. MOSFET N-CH 100V 17A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 79W (Tc) N-Channel 100V 17A (Tc) 110 mOhm @ 9A, 10V 4V @ 1mA 40nC @ 10V 633pF @ 25V 10V ±20V
FQPF19N20T
RFQ
VIEW
RFQ
2,963
In-stock
ON Semiconductor MOSFET N-CH 100V 11.8A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 50W (Tc) N-Channel 100V 11.8A (Tc) 150 mOhm @ 5.9A, 10V 5V @ 250µA 40nC @ 10V 1600pF @ 25V 10V ±30V
FDP085N10A
RFQ
VIEW
RFQ
1,267
In-stock
ON Semiconductor MOSFET N-CH 100V TO-220-3 PowerTrench® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 188W (Tc) N-Channel 100V 96A (Tc) 8.5 mOhm @ 96A, 10V 4V @ 250µA 40nC @ 10V 2695pF @ 50V 10V ±20V
NTD6416ANL-1G
RFQ
VIEW
RFQ
1,241
In-stock
ON Semiconductor MOSFET N-CH 100V 19A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 71W (Tc) N-Channel 100V 19A (Tc) 74 mOhm @ 19A, 10V 2.2V @ 250µA 40nC @ 10V 1000pF @ 25V 4.5V, 10V ±20V
NTD6414AN-1G
RFQ
VIEW
RFQ
1,187
In-stock
ON Semiconductor MOSFET N-CH 100V 32A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 100W (Tc) N-Channel 100V 32A (Tc) 37 mOhm @ 32A, 10V 4V @ 250µA 40nC @ 10V 1450pF @ 25V 10V ±20V