Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PHX23NQ10T,127
RFQ
VIEW
RFQ
1,646
In-stock
NXP USA Inc. MOSFET N-CH 100V 13A TO220F TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 27W (Tc) N-Channel - 100V 13A (Tc) 70 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 1187pF @ 25V 10V ±20V
IPU78CN10N G
RFQ
VIEW
RFQ
3,555
In-stock
Infineon Technologies MOSFET N-CH 100V 13A TO251-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 31W (Tc) N-Channel - 100V 13A (Tc) 78 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IPI80CN10N G
RFQ
VIEW
RFQ
1,763
In-stock
Infineon Technologies MOSFET N-CH 100V 13A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 31W (Tc) N-Channel - 100V 13A (Tc) 80 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IPP80CN10NGHKSA1
RFQ
VIEW
RFQ
3,302
In-stock
Infineon Technologies MOSFET N-CH 100V 13A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 31W (Tc) N-Channel - 100V 13A (Tc) 80 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IRFU5410
RFQ
VIEW
RFQ
1,244
In-stock
Infineon Technologies MOSFET P-CH 100V 13A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 66W (Tc) P-Channel - 100V 13A (Tc) 205 mOhm @ 7.8A, 10V 4V @ 250µA 58nC @ 10V 760pF @ 25V 10V ±20V