- Manufacture :
- Series :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
858
In-stock
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Infineon Technologies | MOSFET N-CH 100V 63A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 140W (Tc) | N-Channel | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | - | - | |||
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VIEW |
2,754
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A IPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 140W (Tc) | N-Channel | 100V | 42A (Tc) | 18 mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | 2930pF @ 25V | 10V | ±20V | |||
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VIEW |
3,142
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 140W (Tc) | N-Channel | 100V | 42A (Tc) | 18 mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | 2930pF @ 25V | 10V | ±20V | |||
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VIEW |
2,351
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 140W (Tc) | N-Channel | 100V | 42A (Tc) | 18 mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | 2930pF @ 25V | 10V | ±20V | |||
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VIEW |
1,627
In-stock
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Infineon Technologies | MOSFET N-CH 100V 42A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 160W (Tc) | N-Channel | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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VIEW |
810
In-stock
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ON Semiconductor | MOSFET N-CH 100V 42A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 136W (Tc) | N-Channel | 100V | 42A (Tc) | 28 mOhm @ 42A, 10V | 4V @ 250µA | 51nC @ 10V | 1800pF @ 25V | 10V | ±20V | |||
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VIEW |
1,518
In-stock
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ON Semiconductor | MOSFET N-CH 100V 42A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 136W (Tc) | N-Channel | 100V | 42A (Tc) | 28 mOhm @ 42A, 10V | 4V @ 250µA | 51nC @ 10V | 1800pF @ 25V | 10V | ±20V | |||
