- Manufacture :
- Series :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,994
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 10.5A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 41W (Tc) | P-Channel | - | 100V | 10.5A (Tc) | 190 mOhm @ 5.25A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,374
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 12A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 41W (Tc) | N-Channel | - | 100V | 12A (Tc) | 100 mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | 4V, 10V | ±16V | |||
|
|
VIEW |
3,052
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 12A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 41W (Tc) | N-Channel | - | 100V | 12A (Tc) | 110 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
