Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF520N
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RFQ
3,191
In-stock
Infineon Technologies MOSFET N-CH 100V 9.7A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 48W (Tc) N-Channel 100V 9.7A (Tc) 200 mOhm @ 5.7A, 10V 4V @ 250µA 25nC @ 10V 330pF @ 25V 10V ±20V
IRFR120NCPBF
RFQ
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RFQ
884
In-stock
Infineon Technologies MOSFET N-CH 100V 9.4A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 48W (Tc) N-Channel 100V 9.4A (Ta) 210 mOhm @ 5.6A, 10V 4V @ 250µA 25nC @ 10V 330pF @ 25V 10V ±20V
IRFI9540G
RFQ
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RFQ
3,226
In-stock
Vishay Siliconix MOSFET P-CH 100V 11A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 48W (Tc) P-Channel 100V 11A (Tc) 200 mOhm @ 6.6A, 10V 4V @ 250µA 61nC @ 10V 1400pF @ 25V 10V ±20V
IRFI540G
RFQ
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RFQ
3,737
In-stock
Vishay Siliconix MOSFET N-CH 100V 17A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 48W (Tc) N-Channel 100V 17A (Tc) 77 mOhm @ 10A, 10V 4V @ 250µA 72nC @ 10V 1700pF @ 25V 10V ±20V