Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SPU11N10
RFQ
VIEW
RFQ
2,031
In-stock
Infineon Technologies MOSFET N-CH 100V 10.5A IPAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA P-TO251-3 50W (Tc) N-Channel 100V 10.5A (Tc) 170 mOhm @ 7.8A, 10V 4V @ 21µA 18.3nC @ 10V 400pF @ 25V 10V ±20V
SPP10N10L
RFQ
VIEW
RFQ
3,381
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A TO-220 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 50W (Tc) N-Channel 100V 10.3A (Tc) 154 mOhm @ 8.1A, 10V 2V @ 21µA 22nC @ 10V 444pF @ 25V 4.5V, 10V ±20V
SPP10N10
RFQ
VIEW
RFQ
1,580
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A TO-220 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 50W (Tc) N-Channel 100V 10.3A (Tc) 170 mOhm @ 7.8A, 10V 4V @ 21µA 19.4nC @ 10V 426pF @ 25V 10V ±20V
SPI10N10L
RFQ
VIEW
RFQ
1,238
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A I2PAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 50W (Tc) N-Channel 100V 10.3A (Tc) 154 mOhm @ 8.1A, 10V 2V @ 21µA 22nC @ 10V 444pF @ 25V 4.5V, 10V ±20V
FQPF19N20T
RFQ
VIEW
RFQ
2,963
In-stock
ON Semiconductor MOSFET N-CH 100V 11.8A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 50W (Tc) N-Channel 100V 11.8A (Tc) 150 mOhm @ 5.9A, 10V 5V @ 250µA 40nC @ 10V 1600pF @ 25V 10V ±30V
IRFR120_R4941
RFQ
VIEW
RFQ
1,944
In-stock
ON Semiconductor MOSFET N-CH 100V 8.4A TO-252AA - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 50W (Tc) N-Channel 100V 8.4A (Tc) 270 mOhm @ 5.9A, 10V 4V @ 250µA 15nC @ 10V 350pF @ 25V 10V ±20V