Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF3710ZGPBF
RFQ
VIEW
RFQ
2,861
In-stock
Infineon Technologies MOSFET N-CH 100V 59A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel 100V 59A (Tc) 18 mOhm @ 35A, 10V 4V @ 250mA 120nC @ 10V 2900pF @ 25V 10V ±20V
IXTC200N10T
RFQ
VIEW
RFQ
1,558
In-stock
IXYS MOSFET N-CH 100V 101A ISOPLUS220 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ 160W (Tc) N-Channel 100V 101A (Tc) 6.3 mOhm @ 50A, 10V 4.5V @ 250µA 152nC @ 10V 9400pF @ 25V 10V ±30V
RFG40N10
RFQ
VIEW
RFQ
2,999
In-stock
ON Semiconductor MOSFET N-CH 100V 40A TO-247 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 160W (Tc) N-Channel 100V 40A (Tc) 40 mOhm @ 40A, 10V 4V @ 250µA 300nC @ 20V - 10V ±20V
AUIRF3710Z
RFQ
VIEW
RFQ
647
In-stock
Infineon Technologies MOSFET N-CH 100V 59A TO220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel 100V 59A (Tc) 18 mOhm @ 35A, 10V 4V @ 250µA 120nC @ 10V 2900pF @ 25V 10V ±20V
RFP40N10
RFQ
VIEW
RFQ
2,674
In-stock
ON Semiconductor MOSFET N-CH 100V 40A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel 100V 40A (Tc) 40 mOhm @ 40A, 10V 4V @ 250µA 300nC @ 20V - 10V ±20V