Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQP5P10
RFQ
VIEW
RFQ
707
In-stock
ON Semiconductor MOSFET P-CH 100V 4.5A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 40W (Tc) P-Channel - 100V 4.5A (Tc) 1.05 Ohm @ 2.25A, 10V 4V @ 250µA 8.2nC @ 10V 250pF @ 25V 10V ±30V
FQP7N10L
RFQ
VIEW
RFQ
3,578
In-stock
ON Semiconductor MOSFET N-CH 100V 7.3A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 40W (Tc) N-Channel - 100V 7.3A (Tc) 350 mOhm @ 3.65A, 10V 2V @ 250µA 6nC @ 5V 290pF @ 25V 5V, 10V ±20V
FQP7N10
RFQ
VIEW
RFQ
2,490
In-stock
ON Semiconductor MOSFET N-CH 100V 7.3A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 40W (Tc) N-Channel - 100V 7.3A (Tc) 350 mOhm @ 3.65A, 10V 4V @ 250µA 7.5nC @ 10V 250pF @ 25V 10V ±25V
IRFU9120NPBF
RFQ
VIEW
RFQ
2,243
In-stock
Infineon Technologies MOSFET P-CH 100V 6.6A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 40W (Tc) P-Channel - 100V 6.6A (Tc) 480 mOhm @ 3.9A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V
IRFU9120N
RFQ
VIEW
RFQ
2,492
In-stock
Infineon Technologies MOSFET P-CH 100V 6.6A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 40W (Tc) P-Channel - 100V 6.6A (Tc) 480 mOhm @ 3.9A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V