Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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928
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Vishay Siliconix MOSFET P-CH 100V 1A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) - Through Hole 4-DIP (0.300", 7.62mm) 4-HVMDIP - P-Channel 100V 1A (Ta) 600 mOhm @ 600mA, 10V 4V @ 250µA 18nC @ 10V 390pF @ 25V - -
IRLD110
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RFQ
2,696
In-stock
Vishay Siliconix MOSFET N-CH 100V 1A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 100V 1A (Ta) 540 mOhm @ 600mA, 5V 2V @ 250µA 6.1nC @ 5V 250pF @ 25V 4V, 5V ±10V
IRLD120
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RFQ
2,811
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Vishay Siliconix MOSFET N-CH 100V 1.3A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 100V 1.3A (Ta) 270 mOhm @ 780mA, 5V 2V @ 250µA 12nC @ 5V 490pF @ 25V 4V, 5V ±10V
IRFD120
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2,286
In-stock
Vishay Siliconix MOSFET N-CH 100V 1.3A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 100V 1.3A (Ta) 270 mOhm @ 780mA, 10V 4V @ 250µA 16nC @ 10V 360pF @ 25V 10V ±20V
IRFD9120
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708
In-stock
Vishay Siliconix MOSFET P-CH 100V 1A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) P-Channel 100V 1A (Ta) 600 mOhm @ 600mA, 10V 4V @ 250µA 18nC @ 10V 390pF @ 25V 10V ±20V
IRFD9110
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1,588
In-stock
Vishay Siliconix MOSFET P-CH 100V 0.7A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) P-Channel 100V 700mA (Ta) 1.2 Ohm @ 420mA, 10V 4V @ 250µA 8.7nC @ 10V 200pF @ 25V 10V ±20V
IRFD110
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RFQ
2,086
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Vishay Siliconix MOSFET N-CH 100V 1A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1.3W (Ta) N-Channel 100V 1A (Ta) 540 mOhm @ 600mA, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
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RFQ
3,511
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Vishay Siliconix MOSFET P-CH 100V 1A HEXDIP - Obsolete Tube MOSFET (Metal Oxide) - Through Hole 4-DIP (0.300", 7.62mm) 4-HVMDIP - P-Channel 100V 1A (Ta) 600 mOhm @ 600mA, 10V 4V @ 250µA 18nC @ 10V 390pF @ 25V - -