Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPU78CN10N G
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3,555
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Infineon Technologies MOSFET N-CH 100V 13A TO251-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 31W (Tc) N-Channel - 100V 13A (Tc) 78 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IPU64CN10N G
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3,147
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Infineon Technologies MOSFET N-CH 100V 17A TO251-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 44W (Tc) N-Channel - 100V 17A (Tc) 64 mOhm @ 17A, 10V 4V @ 20µA 9nC @ 10V 569pF @ 50V 10V ±20V
IPS12CN10LGBKMA1
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RFQ
3,618
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Infineon Technologies MOSFET N-CH 100V 69A TO251-3-11 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 125W (Tc) N-Channel - 100V 69A (Tc) 11.8 mOhm @ 69A, 10V 2.4V @ 83µA 58nC @ 10V 5600pF @ 50V 4.5V, 10V ±20V
IPS118N10N G
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RFQ
1,446
In-stock
Infineon Technologies MOSFET N-CH 100V 75A TO251-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 125W (Tc) N-Channel - 100V 75A (Tc) 11.8 mOhm @ 75A, 10V 4V @ 83µA 65nC @ 10V 4320pF @ 50V 10V ±20V