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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF510L	RFQ VIEW	PDF RFQ	1,333 In-stock	Vishay Siliconix	MOSFET N-CH 100V 5.6A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262-3	-	N-Channel	100V	5.6A (Tc)	540 mOhm @ 3.4A, 10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	-	-
	IRL540L	RFQ VIEW	PDF RFQ	3,630 In-stock	Vishay Siliconix	MOSFET N-CH 100V 28A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262-3	-	N-Channel	100V	28A (Tc)	77 mOhm @ 17A, 5V	-	64nC @ 5V	2200pF @ 25V	4V, 5V	±10V
	IRL520L	RFQ VIEW	PDF RFQ	1,341 In-stock	Vishay Siliconix	MOSFET N-CH 100V 9.2A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262-3	60W (Tc)	N-Channel	100V	9.2A (Tc)	270 mOhm @ 5.5A, 5V	2V @ 250µA	12nC @ 5V	490pF @ 25V	4V, 5V	±10V
	IRL510L	RFQ VIEW	PDF RFQ	3,563 In-stock	Vishay Siliconix	MOSFET N-CH 100V 5.6A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262-3	-	N-Channel	100V	5.6A (Tc)	540 mOhm @ 3.4A, 5V	2V @ 250µA	6.1nC @ 5V	250pF @ 25V	4V, 5V	±10V

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