Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSP110,115
RFQ
VIEW
RFQ
3,930
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 520MA SOT223 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 6.25W (Tc) N-Channel 100V 520mA (Tc) 10 Ohm @ 150mA, 5V 2V @ 1mA - 40pF @ 10V 5V ±20V
PHT4NQ10LT,135
RFQ
VIEW
RFQ
909
In-stock
NXP USA Inc. MOSFET N-CH 100V 3.5A SC73 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 6.9W (Tc) N-Channel 100V 3.5A (Tc) 250 mOhm @ 1.75A, 5V 2V @ 1mA 12.2nC @ 5V 374pF @ 25V 5V ±16V
BSP372L6327HTSA1
RFQ
VIEW
RFQ
1,063
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.7A (Ta) 310 mOhm @ 1.7A, 5V 2V @ 1mA - 520pF @ 25V 5V ±14V
BST82,215
RFQ
VIEW
RFQ
2,200
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 190MA SOT-23 TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 830mW (Tc) N-Channel 100V 190mA (Ta) 10 Ohm @ 150mA, 5V 2V @ 1mA - 40pF @ 10V 5V ±20V