- Series :
- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
946
In-stock
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EPC | MOSFET N-CH 100V 1.7A DIE | - | Obsolete | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 100V | 1.7A (Ta) | - | 2.5V @ 600µA | - | 90pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
3,930
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 100V 520MA SOT223 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 6.25W (Tc) | N-Channel | 100V | 520mA (Tc) | 10 Ohm @ 150mA, 5V | 2V @ 1mA | - | 40pF @ 10V | 5V | ±20V | |||
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|
VIEW |
656
In-stock
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EPC | TRANS GAN 100V 6A BUMPED DIE | eGaN® | Obsolete | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (5-Solder Bar) | - | N-Channel | 100V | 6A (Ta) | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.8nC @ 5V | 205pF @ 50V | 5V | +6V, -5V | |||
|
VIEW |
3,443
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 10A DPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.75W (Ta), 40W (Tc) | N-Channel | 100V | 10A (Tc) | 220 mOhm @ 5A, 5V | 2V @ 250µA | 15nC @ 5V | 1040pF @ 25V | 5V | ±15V | |||
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|
VIEW |
909
In-stock
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NXP USA Inc. | MOSFET N-CH 100V 3.5A SC73 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 6.9W (Tc) | N-Channel | 100V | 3.5A (Tc) | 250 mOhm @ 1.75A, 5V | 2V @ 1mA | 12.2nC @ 5V | 374pF @ 25V | 5V | ±16V | |||
|
VIEW |
1,063
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 100V | 1.7A (Ta) | 310 mOhm @ 1.7A, 5V | 2V @ 1mA | - | 520pF @ 25V | 5V | ±14V | |||
