Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQB34P10TM
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3,839
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ON Semiconductor MOSFET P-CH 100V 33.5A D2PAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.75W (Ta), 155W (Tc) P-Channel - 100V 33.5A (Tc) 60 mOhm @ 16.75A, 10V 4V @ 250µA 110nC @ 10V 2910pF @ 25V 10V ±25V
FQB34P10TM-F085
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2,860
In-stock
ON Semiconductor MOSFET P-CH 100V 33.5A D2PAK Automotive, AEC-Q101, QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.75W (Ta), 155W (Tc) P-Channel - 100V 33.5A (Tc) 60 mOhm @ 16.75A, 10V 4V @ 250µA 110nC @ 10V 2910pF @ 25V 10V ±25V
IRF1310NSTRLPBF
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VIEW
RFQ
3,078
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Infineon Technologies MOSFET N-CH 100V 42A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 160W (Tc) N-Channel - 100V 42A (Tc) 36 mOhm @ 22A, 10V 4V @ 250µA 110nC @ 10V 1900pF @ 25V 10V ±20V
IRF9540NSTRRPBF
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VIEW
RFQ
3,732
In-stock
Infineon Technologies MOSFET P-CH 100V 23A D2PAK HEXFET® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V
FDB3632-F085
RFQ
VIEW
RFQ
769
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ON Semiconductor MOSFET N-CH 100V 12A D2PAK Automotive, AEC-Q101, PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB 310W (Tc) N-Channel - 100V 12A (Ta) 9 mOhm @ 80A, 10V 4V @ 250µA 110nC @ 10V 6000pF @ 25V 10V ±20V
IRF9540NSTRLPBF
RFQ
VIEW
RFQ
3,784
In-stock
Infineon Technologies MOSFET P-CH 100V 23A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 110W (Tc) P-Channel - 100V 23A (Tc) 117 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 1450pF @ 25V 10V ±20V