- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
764
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 12A DPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.28W (Ta), 56.6W (Tc) | N-Channel | 100V | 12A (Ta) | 165 mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | 10V | ±20V | ||||
VIEW |
752
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 12A DPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.28W (Ta), 56.6W (Tc) | N-Channel | 100V | 12A (Ta) | 165 mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | 10V | ±20V | ||||
VIEW |
730
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||||
VIEW |
3,731
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 18A PPAK 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.8W (Ta), 52W (Tc) | N-Channel | 100V | 18A (Tc) | 58 mOhm @ 5.5A, 10V | 4.4V @ 250µA | 20nC @ 10V | 750pF @ 50V | 10V | ±20V | ||||
VIEW |
3,751
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 27A POWERPAKSO | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 45W (Tc) | N-Channel | 100V | 27A (Tc) | 30 mOhm @ 10A, 10V | 3.5V @ 250µA | 20nC @ 10V | 800pF @ 25V | 10V | ±20V | ||||
VIEW |
1,227
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||||
VIEW |
1,308
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 18A 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.8W (Ta), 52W (Tc) | N-Channel | 100V | 18A (Tc) | 58 mOhm @ 5.5A, 10V | 4.4V @ 250µA | 20nC @ 10V | 750pF @ 50V | 10V | ±20V | ||||
VIEW |
1,133
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 17A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 71W (Tc) | N-Channel | 100V | 17A (Tc) | 81 mOhm @ 17A, 10V | 4V @ 250µA | 20nC @ 10V | 620pF @ 25V | 10V | ±20V |