- Manufacture :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,268
In-stock
|
NXP USA Inc. | MOSFET N-CH QFN3333 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 65W (Tc) | N-Channel | - | 100V | 27A (Tc) | 32 mOhm @ 10A, 10V | 4V @ 1mA | 23nC @ 10V | 1350pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,640
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 27A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 58W (Tc) | N-Channel | - | 100V | 27A (Tc) | 33 mOhm @ 27A, 10V | 4V @ 29µA | 24nC @ 10V | 1570pF @ 50V | 10V | ±20V | |||
|
VIEW |
3,751
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 27A POWERPAKSO | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 45W (Tc) | N-Channel | - | 100V | 27A (Tc) | 30 mOhm @ 10A, 10V | 3.5V @ 250µA | 20nC @ 10V | 800pF @ 25V | 10V | ±20V | |||
