- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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,%20SC-63.JPG)
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VIEW |
1,077
In-stock
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ON Semiconductor | MOSFET P-CH 100V 9.4A DPAK | Automotive, AEC-Q101 | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 50W (Tc) | P-Channel | - | 100V | 9.4A (Tc) | 290 mOhm @ 4.7A, 10V | 4V @ 250µA | 27nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,229
In-stock
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Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
|
VIEW |
791
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 9.4A LFPAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 37.3W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 153 mOhm @ 2A, 10V | 4V @ 1mA | 9.4nC @ 10V | 497pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,337
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 9.4A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 33 mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | 880pF @ 50V | 10V | ±20V | |||
|
VIEW |
949
In-stock
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Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
