Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFL4310TR
RFQ
VIEW
RFQ
861
In-stock
Infineon Technologies MOSFET N-CH 100V 1.6A SOT223 HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel 100V 1.6A (Ta) 200 mOhm @ 1.6A, 10V 4V @ 250µA 25nC @ 10V 330pF @ 25V 10V ±20V
STN2NF10
RFQ
VIEW
RFQ
2,348
In-stock
STMicroelectronics MOSFET N-CH 100V 2.4A SOT-223 STripFET™ II Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 3.3W (Tc) N-Channel 100V 2.4A (Tc) 260 mOhm @ 1.2A, 10V 4V @ 250µA 14nC @ 10V 280pF @ 25V 10V ±20V
IRFL110TRPBF
RFQ
VIEW
RFQ
2,445
In-stock
Vishay Siliconix MOSFET N-CH 100V 1.5A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta), 3.1W (Tc) N-Channel 100V 1.5A (Tc) 540 mOhm @ 900mA, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
PHT6NQ10T,135
RFQ
VIEW
RFQ
3,704
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 3A SOT223 TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Ta), 8.3W (Tc) N-Channel 100V 3A (Ta) 90 mOhm @ 3A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 25V 10V ±20V
ZVN2110GTA
RFQ
VIEW
RFQ
1,691
In-stock
Diodes Incorporated MOSFET N-CH 100V 500MA SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) N-Channel 100V 500mA (Ta) 4 Ohm @ 1A, 10V 2.4V @ 1mA - 75pF @ 25V 10V ±20V
STN1NF10
RFQ
VIEW
RFQ
3,487
In-stock
STMicroelectronics MOSFET N-CH 100V 1A SOT-223 STripFET™ II Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.5W (Tc) N-Channel 100V 1A (Tc) 800 mOhm @ 500mA, 10V 4V @ 250µA 6nC @ 10V 105pF @ 25V 10V ±20V
PHT4NQ10T,135
RFQ
VIEW
RFQ
3,242
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 3.5A SOT223 TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 6.9W (Tc) N-Channel 100V 3.5A (Tc) 250 mOhm @ 1.75A, 10V 4V @ 1mA 7.4nC @ 10V 300pF @ 25V 10V ±20V
CZDM1003N TR
RFQ
VIEW
RFQ
948
In-stock
Central Semiconductor Corp MOSFET N-CH 100V 3A SOT-223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) N-Channel 100V 3A (Ta) 150 mOhm @ 2A, 10V 4V @ 250µA 15nC @ 10V 975pF @ 25V 10V 20V
ZXMN10A25GTA
RFQ
VIEW
RFQ
2,685
In-stock
Diodes Incorporated MOSFET N-CH 100V 2.9A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) N-Channel 100V 2.9A (Ta) 125 mOhm @ 2.9A, 10V 4V @ 250µA 17nC @ 10V 859pF @ 50V 10V ±20V
ZVP2110GTA
RFQ
VIEW
RFQ
3,170
In-stock
Diodes Incorporated MOSFET P-CH 100V 0.31A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) P-Channel 100V 310mA (Ta) 8 Ohm @ 375mA, 10V 3.5V @ 1mA - 100pF @ 25V 10V ±20V
IRFL4310TRPBF
RFQ
VIEW
RFQ
1,895
In-stock
Infineon Technologies MOSFET N-CH 100V 1.6A SOT223 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel 100V 1.6A (Ta) 200 mOhm @ 1.6A, 10V 4V @ 250µA 25nC @ 10V 330pF @ 25V 10V ±20V
IRFL9110TRPBF
RFQ
VIEW
RFQ
3,881
In-stock
Vishay Siliconix MOSFET P-CH 100V 1.1A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta), 3.1W (Tc) P-Channel 100V 1.1A (Tc) 1.2 Ohm @ 660mA, 10V 4V @ 250µA 8.7nC @ 10V 200pF @ 25V 10V ±20V