Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
DMT10H015LK3-13
RFQ
VIEW
RFQ
825
In-stock
Diodes Incorporated MOSFET N-CHANNEL 100V 50A TO252 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.9W (Ta) N-Channel - 100V 50A (Tc) 15 mOhm @ 20A, 10V 3.5V @ 250µA 33.3nC @ 10V 1871pF @ 50V 6V, 10V ±20V
STD40NF10
RFQ
VIEW
RFQ
2,311
In-stock
STMicroelectronics MOSFET N-CH 100V 50A DPAK STripFET™ II Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 125W (Tc) N-Channel - 100V 50A (Tc) 28 mOhm @ 25A, 10V 4V @ 250µA 62nC @ 10V 2180pF @ 25V 10V ±20V
IPD50N10S3L16ATMA1
RFQ
VIEW
RFQ
1,969
In-stock
Infineon Technologies MOSFET N-CH 100V 50A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 100W (Tc) N-Channel - 100V 50A (Tc) 15 mOhm @ 50A, 10V 2.4V @ 60µA 64nC @ 10V 4180pF @ 25V 4.5V, 10V ±20V
SQD50N10-8M9L_GE3
RFQ
VIEW
RFQ
1,902
In-stock
Vishay Siliconix MOSFET N-CHAN 100V TO252 Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 136W (Tc) N-Channel - 100V 50A (Tc) 8.9 mOhm @ 15A, 10V 2.5V @ 250µA 70nC @ 10V 2950pF @ 25V 4.5V, 10V ±20V