- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,667
In-stock
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STMicroelectronics | MOSFET N-CH 100V 180A H2PAK-6 | DeepGATE™, STripFET™ VII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | H2PAK-6 | 315W (Tc) | N-Channel | - | 100V | 180A (Tc) | 2.3 mOhm @ 60A, 10V | 4.5V @ 250µA | 180nC @ 10V | 12800pF @ 25V | 10V | ±20V | |||
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VIEW |
3,700
In-stock
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Infineon Technologies | MOSFET N-CH TO263-7 | Automotive, AEC-Q101, OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 300W (Tc) | N-Channel | - | 100V | 180A (Tc) | 2.5 mOhm @ 100A, 10V | 3.5V @ 275µA | 200nC @ 10V | 14600pF @ 25V | 10V | ±20V | |||
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VIEW |
1,772
In-stock
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STMicroelectronics | MOSFET N-CH 100V 180A H2PAK-6 | Automotive, AEC-Q101, STripFET™ F3 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | H2PAK-6 | 315W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.5 mOhm @ 60A, 10V | 4V @ 250µA | 114.6nC @ 10V | 6665pF @ 25V | 10V | ±20V | |||
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VIEW |
1,882
In-stock
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ON Semiconductor | MOSFET N-CH 100V 200A D2PAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | D²PAK (TO-263) | 3.8W (Ta), 250W (Tc) | N-Channel | - | 100V | 200A (Tc) | 2.6 mOhm @ 27A, 10V | 4V @ 250µA | 118nC @ 10V | 8545pF @ 50V | 10V | ±20V | |||
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VIEW |
945
In-stock
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STMicroelectronics | MOSFET N-CH 100V 180A H2PAK-2 | DeepGATE™, STripFET™ VII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | H2PAK-6 | 315W (Tc) | N-Channel | - | 100V | 180A (Tc) | 2.5 mOhm @ 60A, 10V | 3.8V @ 250µA | 180nC @ 10V | 12800pF @ 25V | 10V | ±20V | |||
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VIEW |
964
In-stock
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Infineon Technologies | MOSFET N-CH 100V D2PAK-7 | OptiMOS™-5 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7 | 313W (Tc) | N-Channel | - | 100V | 180A (Tc) | 1.7 mOhm @ 100A, 10V | 4.1V @ 270µA | 195nC @ 10V | 840pF @ 50V | 10V | ±20V |